| dc.description.abstract | Solar cell efficiency as a function of the energy gap has been simulated by calculating the output
current characteristics of the devices based on the distribution of charge carriers, obtained from the
solution of the Poisson equation and the Continuity equation. The hydrogenated amorphous silicon
(a-Si:H) based solar cell, has simulated in the form of one-dimensional single junction p/i/n. The
junction structure of a-SiC:H/a-Si:H/a-Si:H designed have the thickness of 0,015 μm/0,550
μm/0,030 μm, respectively. For simulation, the energy gap has considered constant in the p and n
layers, whereas the i layer varies according to the empirical data of energy gap obtained from the
deposition parameters of filament temperature. Simulations performed using the finite element
method supported by FEMLAB software. Based on simulation results, obtained the highest
efficiency of 9.35% corresponds to the lowest energy gap data of 1.706 eV for layer i. This
appropriates to the filament temperature of 800
o
C and subsequently used as the optimum
deposition parameters of the material. | en_US |
