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dc.contributor.authorNASIROH, Chilwatun
dc.contributor.authorSUPRIADI, Bambang
dc.contributor.authorHANDAYANI, Rif’ati Dina
dc.date.accessioned2021-09-21T01:00:07Z
dc.date.available2021-09-21T01:00:07Z
dc.date.issued2020-12-31
dc.identifier.urihttp://repository.unej.ac.id/handle/123456789/105206
dc.description.abstractSemiconductor materials can be used as potential barriers to Tunnelling effects. In this study, four semiconductor materials are arranged in various ways to form a quadruple potential structure to analyze the value of the transmission coefficient. The analysis was conducted using the analytical and numerical matrix propagation method using Matlab2018a. The results confirmed that the inverted arrangement produces the same transmission coefficient value for each energy. So that there are 12 kinds of transmission coefficient values generated from 24 arrangements. The semiconductor material composition with the most considerable transmission coefficient value is ADCB and BCDA, which have a value of 0.8087. The variation of the arrangement affects the value of the transmission coefficient so that it can be used as a guideline for selecting the arrangement that produces the most optimum value of the transmission coefficient from various possible arrangementsen_US
dc.language.isoenen_US
dc.publisherIndonesian Review of Physics (IRiP)en_US
dc.subjectTransmission coefficienten_US
dc.subjectTunneling effecten_US
dc.subjectSemiconductoren_US
dc.titleTunnelling Effect for Quadruples Potential Using Matrix Propagation Methoden_US
dc.typeArticleen_US
dc.identifier.nidnNIDN0010076802
dc.identifier.nidnNIDN0005028101


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