Please use this identifier to cite or link to this item: https://repository.unej.ac.id/xmlui/handle/123456789/87625
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dc.contributor.authorPrastowo, Sri Handono Budi-
dc.contributor.authorSupriadi, Bambang-
dc.contributor.authorRidlo, Zainur Rasyid-
dc.contributor.authorPrihandono, Trapsilo-
dc.date.accessioned2018-11-07T02:48:20Z-
dc.date.available2018-11-07T02:48:20Z-
dc.date.issued2018-11-07-
dc.identifier.urihttp://repository.unej.ac.id/handle/123456789/87625-
dc.descriptionIOP Conf. Series: Journal of Physics: Conf. Series 1008 (2018) 012012en_US
dc.description.abstractA simple model of transport phenomenon tunnelling effect through double barrier structure was developed.In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV.The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).en_US
dc.language.isoenen_US
dc.subjectTunneling effecten_US
dc.subjectGaAsen_US
dc.subjectPbSen_US
dc.subjectdouble potential barriersen_US
dc.titleTunneling effect on double potential barriers GaAs and PbSen_US
dc.typeArticleen_US
Appears in Collections:LSP-Jurnal Ilmiah Dosen

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