Solar Panel Design Using a Bipolar Junction Transistor (Bjt) Semiconductor

Abstract

The development of solar energy has progressed rapidly, with photovoltaic cells converting solar energy into electricity. Although the price is expensive, this technology is widely used in various aspects of life. However, many people buy solar panels without understanding their construction. This study used aims to determine the performance of solar panels and other materials made from silicon silicon-based Bipolar Junction Transistor (BJT) 2N3055 and to examine the effect of solar irradiation. This study used an experimental method by directly measuring the parameters to be obtained at the Jember University CDAST building. During the test it was carried out from 08.00 to 16.00 pm. The highest power obtained was 0,0117 watt, the intensity was 112.600 Lux and the irradiation was 164,8 watt/m2. When connected to a solar panel battery load, it is unable to charge and a resistive load is used, the higher the irradiation value, the higher the voltage obtained, but inversely proportional to the current obtained.